Location: 260 Everitt Lab
Time: 11:00-11:50am
Credits: 3 hours
Instructor: Professor Leburton - jleburto@uiuc.edu
Office: Beckman Institute - 3251
Phone: 333-6813
Office Hour: Wednesday 2-3pm
Teaching Assistant: Mueen Nawaz - nawaz@uiuc.edu
Office: Beckman Institute 3249
Phone: 244-1964 (much easier to contact him via email).
TA Office Hour: Thursday 2-3pm. Location: On one of the bridges on the 3rd floor of Beckman Institute.
Detailed presentation of advanced concepts such as generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices.
Prerequisite: ECE440
Scores breakdown: 250 points for the final exam, 100 points for the homework, and 150 points for the midterm exam.
Note:This page will be prettified later...
pn_des.cmd.txt (Right click and save the file, and rename it to pn_des.cmd).
We will meet at the regular class time on Monday, the 18th of February 2008 at DCL L440.
Midterm Exam: March 12th - in class. Sample midterm
Midterm Solution.
Final Exam: Saturday, May 3rd, 8-11a
Topics for the final exam. Updated! April 29th, 2008